aot15s60/AOB15S60/aotf15s60 600v 15a a aa a mos tm power transistor v ds @ t j,max 700v i dm 63a r ds(on),max 0.29 w q g,typ 16nc e oss @ 400v 3.6 m j symbol v ds v gs i dm i ar e ar e as mosfet dv/dt ruggedness peak diode recovery dv/dt h t j , t stg t l symbol r q ja r q cs r q jc * drain current limited by maximum junction temperature. maximum case-to-sink a maximum junction-to-ambient a,d 300 65 65 maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds j c/w derate above 25 o c parameter aot15s60/AOB15S60 0.22 -55 to 150 aotf15s60l 100 units v/ns c/w w/ o c c thermal characteristics 0.5 -- c/w maximum junction-to-case 0.6 4.5 c the aot15s60& AOB15S60 & aotf15s60 have been fabricated using the advanced a mos tm high voltage process that is designed to deliver high levels of performance and robustness in switching applications. by providing low r ds(on) , q g and e oss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. v units parameter absolute maximum ratings t a =25c unless otherwise noted aot15s60/AOB15S60 aotf15s60l drain-source voltage 600 15* 15 a 2.4 30 gate-source voltage v a 63 t c =100c pulsed drain current c continuous drain current t c =25c i d avalanche current c 10* 10 junction and storage temperature range t c =25c dv/dt 1.67 20 power dissipation b 173 single pulsed avalanche energy g w 86 p d repetitive avalanche energy c 27.8 208 mj mj g d s www.freescale.net.cn 1/6 general description features free datasheet http:///
symbol min typ max units 600 - - 650 700 - - - 1 - 10 - i gss gate-body leakage current - - 100 n a v gs(th) gate threshold voltage 2.5 3.2 3.8 v - 0.254 0.29 w - 0.68 0.78 w v sd - 0.83 - v i s maximum body-diode continuous current - - 15 a i sm - - 63 a c iss - 717 - pf c oss - 58 - pf c o(er) - 41.2 - pf c o(tr) - 125.2 - pf c rss - 1.3 - pf r g - 13.4 - w q g - 15.6 - nc q gs - 3.5 - nc q gd - 6.0 - nc t d(on) - 24.5 - ns t r - 22 - ns t d(off) - 84 - ns t f - 24 - ns t rr - 282 - ns i rm - 26 - a q rr - 4.5 - m c v gs =0v, v ds =100v, f=1mhz gate resistance v gs =0v, v ds =0v, f=1mhz electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i d =250a, v gs =0v, t j =150c effective output capacitance, energy related h v gs =0v, v ds =0 to 480v, f=1mhz switching parameters i dss effective output capacitance, time related i r ds(on) static drain-source on-resistance i s =7.5a,v gs =0v, t j =25c diode forward voltage input capacitance v gs =0v, v ds =100v, f=1mhz output capacitance i f =7.5a,di/dt=100a/ m s,v ds =400v reverse transfer capacitance bv dss v gs =10v, v ds =400v, i d =7.5a, r g =25 w turn-off fall time total gate charge v gs =10v, v ds =480v, i d =7.5a gate source charge gate drain charge v gs =10v, i d =7.5a, t j =25c v ds =480v, t j =150c zero gate voltage drain current body diode reverse recovery charge i f =7.5a,di/dt=100a/ m s,v ds =400v maximum body-diode pulsed current c turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime body diode reverse recovery time peak reverse recovery current i f =7.5a,di/dt=100a/ m s,v ds =400v v v gs =10v, i d =7.5a, t j =150c drain-source breakdown voltage i d =250a, v gs =0v, t j =25c m a v ds =0v, v gs =30v v ds =600v, v gs =0v v ds =5v,i d =250 m a a. the value of r q ja is measured with the device in a still air environment with t a =25c. b. the power dissipation p d is based on t j(max) =150c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c. repetitive rating, pulse width limited by junction temperature t j(max) =150c, ratings are based on low frequency and duty cycles to keep initial t j =25c. d. the r q ja is the sum of the thermal impedance from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse rating. g. l=60mh, i as =2.4a, v dd =150v, starting t j =25c h. c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v (br)dss. i. c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v (br)dss. j. wavesoldering only allowed at leads. www.freescale.net.cn 2/6 aot15s60/AOB15S60/aotf15s60 600v 15a a aa a mos tm power transistor free datasheet http:///
typical electrical and thermal characteristics 0 5 10 15 20 25 30 0 5 10 15 20 v ds (volts) figure 1: on-region characteristics@25c i d (a) v gs =4.5v 6v 10v 7v 0.01 0.1 1 10 100 2 4 6 8 10 v gs (volts) figure 3: transfer characteristics i d (a) -55c v ds =20v 25c 125c 0.0 0.2 0.4 0.6 0.8 1.0 0 5 10 15 20 25 30 35 i d (a) figure 4: on-resistance vs. drain current and gate voltage r ds(on) ( w w w w ) v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 temperature (c) figure 5: on-resistance vs. junction temperature normalized on-resistance v gs =10v i d =7.5a 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 t j ( o c) figure 6: break down vs. junction temperature bv dss (normalized) 0 5 10 15 20 25 0 5 10 15 20 v ds (volts) figure 2: on-region characteristics@125c i d (a) v gs =4.5v 5v 10v 6v 5v 5.5v 5.5v 7v www.freescale.net.cn 3/6 aot15s60/AOB15S60/aotf15s60 600v 15a a aa a mos tm power transistor free datasheet http:///
typical electrical and thermal characteristics 0 3 6 9 12 15 0 5 10 15 20 25 q g (nc) figure 8: gate-charge characteristics v gs (volts) v ds =480v i d =7.5a 1 10 100 1000 10000 0 100 200 300 400 500 600 v ds (volts) figure 9: capacitance characteristics capacitance (pf) c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 v ds (volts) i d (amps) figure 11: maximum forward biased safe operating area for aot(b)15s60 (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150c t c =25c 100 m s 0.01 0.1 1 10 100 0.1 1 10 100 1000 v ds (volts) i d (amps) figure 12: maximum forward biased safe operating area for aotf15s60l(note f) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150c t c =25c 100 m s 1s 10s 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 7: body-diode characteristics (note e) i s (a) 25c 125c 0 2 4 6 8 0 100 200 300 400 500 600 v ds (volts) figure 10: coss stroed energy eoss(uj) e oss www.freescale.net.cn 4/6 aot15s60/AOB15S60/aotf15s60 600v 15a a aa a mos tm power transistor free datasheet http:///
typical electrical and thermal characteristics 0 5 10 15 20 0 25 50 75 100 125 150 t case (c) figure 14: current de-rating (note b) current rating i d (a) 0 40 80 120 160 200 25 50 75 100 125 150 175 t case (c) figure 13: avalanche energy e as (mj) 0.001 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 15: normalized maximum transient thermal impedance for aot(b)15s60 (note f) z q q q q jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =0.6c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 16: normalized maximum transient thermal impedance for aotf15s60l (note f) z q q q q jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =4.5c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse www.freescale.net.cn 5/6 aot15s60/AOB15S60/aotf15s60 600v 15a a aa a mos tm power transistor free datasheet http:///
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar www.freescale.net.cn 6/6 aot15s60/AOB15S60/aotf15s60 600v 15a a aa a mos tm power transistor free datasheet http:///
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